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Introduction
Spin Valve Sensors
NVE’s spin valve sensors are designed using our synthetic anti-ferromagnet pinned layer. This pinned
layer is very robust, and not subject to upset or reset. The basic GMR material construction includes
the pinned layer and a free layer; the free layer can be influenced by an external magnetic field in the
range of 30 to 200 Gauss. The output of the sensor varies in a cosine relationship to the angle between
the free layer and the pinned layer.
As long as the external field strength is in the 30 to 200 Gauss range, the free layer in the GMR
material is saturated. It will therefore point in the same direction as the external field, while the pinned
layer remains pointed in its fixed direction. The diagram below shows a vector concept of the device
operation:
Angle Between Pinned
and Free Layers
Determines Electrical
Resistance of Sensor
Free Layer Aligns
with the Applied
Magnetic Field
The percent change of resistance available with this GMR material is about 5%. The output is a cosine
function over 360 degrees of angular movement by the external, saturating magnetic field.
- 10 -
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